Semiconductor Quantum Information Device Theory Research Team

Principal Investigator

PI Name Daniel Loss
Degree Ph.D.
Title Team Leader
Brief Resume
1985Ph.D. in Theoretical Physics, University of Zurich, Switzerland
1985Postdoctoral Research Associate, University of Zurich, Switzerland
1989Postdoctoral Research Fellow, University of Illinois at Urbana-Champaign, USA
1991Research Scientist, IBM T. J. Watson Research Center, USA
1993Assistant/Associate Professor, Simon Fraser University, Canada
1996Professor, Department of Physics, University of Basel, Switzerland (-present)
2012Team Leader, Emergent Quantum System Research Team, RIKEN
2013Team Leader, Quantum System Theory Research Team, Quantum Information Electronics Division, RIKEN Center for Emergent Matter Science (-present)
2020Team Leader, Semiconductor Quantum Information Device Theory Research Team, Quantum Computing Division, RIKEN Center for Emergent Matter Science (-present)


Our team is working on the theory of a spin-based quantum computer. We design its CMOS-compatible components deriving from Si and Ge gated quantum dots. We focus on spin qubits that can be manipulated by electric fields through various spin-orbit interactions. Using advanced bandstructure models, we investigate the properties of holes and electrons confined in low-dimensional geometries. We search for optimal setups and ways of protecting the qubits from noise. We analyze perspective qubit interconnects which would allow assembling a large number of qubits into networks. Our ultimate goal is to identify fast, small, and scalable elements of the future quantum computer.

Research Fields

Theoretical Physics, Quantum Theory of Condensed Matter


Quantum dots
Spin-based quantum information science
Spin-orbit interaction
Quantum information processing
Quantum information devices


Measurement of a single-electron wave function

Lateral quantum dots, defined in a two-dimensional electron gas by nanometer-scale surface gates, show excellent flexibility. They allow to realize, in principle, arbitrary and tunable dot shapes, essential for spin-qubit control. The bottleneck in taking full advantage of this flexibility was that, so far, there has been no direct method available to adequately determine the quantum dot confinement geometry. We have developed a noninvasive technique that removes this obstacle. We developed theoretically and demonstrated experimentally methods to determine the wave function of a single electron located in a semiconductor. The method is based on in-plane magnetic-field-assisted spectroscopy which allows extraction of the in-plane orientation and full three-dimensional size parameters of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with subnanometer precision.

Sequence to measure the energies, the tunneling-in rate dependence, and the lowest states wave functions visualization.


Daniel Loss

Team Leader loss.daniel[at] R


2-1 Hirosawa, Wako, Saitama 351-0198 Japan