121st CEMS Colloquium

Title

Advanced Silicon CMOS Devices and Following 2D Channels

Abstract

Advanced silicon CMOS devices are going to be reviewed on the progresses from a planar FET through a FinFET to Gate-All-Around Nano-Sheet (GAA-NS) FET. And also the future technologies such as 3D-stacked FET and Following 2D Channels will be also discussed [1-9]. Beside those technologies, a back-side interconnect and 3D fabric LSI technologies are also going to be shown. Based on those discussions, I would like to discuss on our future collaborations to accelerate the progress of the integrated-circuit technology.

References
[1] T. Ohashi, et al., 2015 JJAP, 54 04DN08.
[2] Ryo Ono, et al., JJAP, 61 SC1023, 2022, DOI:10.35848/1347-4065/ac3fc9.
[3] Masaki Otomo, et al., JJAP, 62 SC1015 (2023), DOI: 10.35848/1347-4065/aca7cf
[4] Shinya Imai,et al.,IEEE/EDTM2023,25E-2.
[5] Ryo Ono, et al., IEEE/EDTM 2023, P-008.
[7] Naoki Matsunaga, et al., 2J-4, P_212, IEEE/EDTM 2024, to be shown.
[8] Hitoshi Wakabayashi, Invited, 4D-1, IEEE/EDTM 2024, to be presented.
[9] Shinya Imai, et al., 4D-3, P_215, IEEE/EDTM 2024, to be shown.