81st CEMS Colloquium [Cancelled]

Title

Perspective on the Present Research on Native Point-Defects in Semiconductors

Abstract

For semiconductors, numerous research studies on intrinsic point defects have been performed as a long-term issue because of their crucial influence on device functionality and degradation [1, 2]. Currently, there are puzzling variations between the reported values of formation and diffusivity of vacancies and self-interstitials even in silicon. Here, a comprehensive review of what has been studied experimentally and theoretically on the formation energies and entropies of vacancies and self-interstitials, some influences of impurities and pressure on them, and complex formation in silicon is given to break through the current situation. Then, point-defect studies in germanium and wide-gap semiconductors are briefly mentioned [3].

[1] S. M. Hu, Mater. Sci. Eng. R 1994, 13, 105.
[2] P. Pichler, Intrinsic point defects, impurities, and their diffusion in silicon 2004 (Springer).
[3] I. Yonenaga, Oyo Butsuri 2017, 86, 1040 (in Japanese).